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题名: Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers
作者: Wu, BP;  Wu, DH;  Xiong, YH;  Huang, SS;  Ni, HQ;  Xu, YQ;  Niu, ZC
会议日期: JUN 04-06, 2007
摘要: In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.
会议名称: 6th International Conference on Nanoscience and Technology
会议文集: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wu, BP;Wu, DH;Xiong, YH;Huang, SS;Ni, HQ;Xu, YQ;Niu, ZC.Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers .见:AMER SCIENTIFIC PUBLISHERS .JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ,25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA ,39845,9 (2): 1333-1336 Sp. Iss. SI FEB
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