Desorption and Ripening of Low Density InAs Quantum Dots
Zhan, F; Huang, SS; Niu, ZC; Ni, HQ; Xiong, YH; Fang, ZD; Zhou, HY; Luo, Y; Huang, SS, Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China.
会议名称6th International Conference on Nanoscience and Technology
会议录名称JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
页码9 (2): 844-847 Sp. Iss. SI FEB
会议日期JUN 04-06, 2007
会议地点Beijing, PEOPLES R CHINA
出版地25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA
出版者AMER SCIENTIFIC PUBLISHERS
ISSN1533-4880
部门归属[huang, s. s.; luo, y.] tsinghua univ, dept elect engn, state key lab integrated optoelect, beijing 100084, peoples r china; [zhan, f.; zhou, h. y.] beijing normal univ, minist educ, key lab beam technol & mat modificat, beijing 100875, peoples r china; [huang, s. s.; niu, z. c.; ni, h. q.; xiong, y. h.; fang, z. d.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
摘要In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single OD properties without resorting to submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing the low density QDs. Ripening of InAs QDs is clearly observed during the post-growth annealing. Photoluminescence spectroscopy reveals that the emission wavelength of low density InAs QDs arrives at 1332.4 nm with a GaAs capping layer.
关键词Quantum Dots
学科领域半导体化学
主办者Natl Steering Comm Nanotechnol.; Natl Ctr Nanosci Technol.; Minist Sci & Technol China.; Natl Nat Sci Fdn China.; Minist Educ China.; Chinese Acad Sci.; China Assoc Sci & Technol.
收录类别其他
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/8326
专题中国科学院半导体研究所(2009年前)
通讯作者Huang, SS, Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China.
推荐引用方式
GB/T 7714
Zhan, F,Huang, SS,Niu, ZC,et al. Desorption and Ripening of Low Density InAs Quantum Dots[C]. 25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA:AMER SCIENTIFIC PUBLISHERS:9 (2): 844-847 Sp. Iss. SI FEB.
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