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题名: In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator
作者: Liu, YF;  Xie, J;  Yang, JL;  Tang, LJ;  Yang, FH
出版日期: 2008
会议日期: OCT 20-23, 2008
摘要: Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees C and annealed at 1000 degrees C for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and bigh-f micro-mechanical disk resonators.
会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology
KOS主题词: Photography--Films;  Finite volume method
会议文集: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Liu, YF;Xie, J;Yang, JL;Tang, LJ;Yang, FH.In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator .见:IEEE .2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,VOLS 1-4: 2379-2382
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