Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

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	Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots
	Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB; Chen, J, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
	2009
会议录名称	JOURNAL OF APPLIED PHYSICS
页码	105 (12): Art. No. 123705 JUN 15
出版地	CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
出版者	AMER INST PHYSICS
ISSN	0021-8979
部门归属	[chen, j.; fan, w. j.; xu, q.; zhang, x. w.] nanyang technol univ, sch elect & elect engn, singapore 639798, singapore; [li, s. s.; xia, j. b.] chinese acad sci, inst semicond, beijing 10083, peoples r china
摘要	The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143025]
关键词	Emission
学科领域	半导体物理
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8252
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen, J, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
推荐引用方式 GB/T 7714	Chen J,Fan WJ,Xu Q,et al. Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots[C]. CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA:AMER INST PHYSICS,2009:105 (12): Art. No. 123705 JUN 15.

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