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题名: High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
作者: Zhang, Y;  Yan, FW;  Gao, HY;  Li, JM;  Zeng, YP;  Wang, GH;  Yang, FH
出版日期: 2008
会议日期: NOV 12-14, 2007
摘要: Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.
会议名称: Conference on Solid State Lighting and Solar Energy Technologies
KOS主题词: Nitrides;  Light emitting diodes;  atomic layer deposition
会议文集: SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhang, Y ; Yan, FW ; Gao, HY ; Li, JM ; Zeng, YP ; Wang, GH ; Yang, FH .High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T .见:SPIE-INT SOC OPTICAL ENGINEERING .SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6841: T8410-T8410
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