Advanced   Register
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 专利

title: GaN基功率型LED的P、N双透明接触电极及制备方法
author: 王立彬;  王良臣
metadata_47: 2008-10-15
Appears in Collections:半导体研究所机构知识库_专利

Files in This Item:

File SizeFormat
full/CN200710065320.5.pdf496KbAdobe PDF 联系获取全文


Permission Statement: All products of this item follow the Knowledge sharing protocol (Creative Commons)


Recommended Citation:
王立彬;王良臣,GaN基功率型LED的P、N双透明接触电极及制备方法,CN200710065320.5,20070411
Service
 Recommend this item
 Sava as my favorate item
 Show this item's statistics
 Export Endnote File
Google Scholar
 Similar articles in Google Scholar
 [王立彬]'s Articles
 [王良臣]'s Articles
CSDL cross search
 Similar articles in CSDL Cross Search
 [王立彬]‘s Articles
 [王良臣]‘s Articles
Scirus search
 Similar articles in Scirus
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0! Copyright © 2007-2012  中国科学院半导体研究所  -Feedback
Technical Support Lanzhou Branch of National Science Library, Chinese Academy of Sciences
Based on DSpace by MIT and Hewlett-Packard