Advanced   Register
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 专利

title: 在硅衬底上生长无裂纹氮化镓薄膜的方法
author: 刘喆;  李晋闽;  王军喜;  王晓亮;  王启元;  刘宏新;  王俊;  曾一平
metadata_47: 2007-5-23
Appears in Collections:半导体研究所机构知识库_专利

Files in This Item:

File SizeFormat
full/200510086899.pdf429KbAdobe PDF 联系获取全文


Permission Statement: All products of this item follow the Knowledge sharing protocol (Creative Commons)


Recommended Citation:
刘喆;李晋闽;王军喜;王晓亮;王启元;刘宏新;王俊;曾一平,在硅衬底上生长无裂纹氮化镓薄膜的方法 ,200510086899,20051117
Service
 Recommend this item
 Sava as my favorate item
 Show this item's statistics
 Export Endnote File
Google Scholar
 Similar articles in Google Scholar
 [刘喆]'s Articles
 [李晋闽]'s Articles
 [王军喜]'s Articles
CSDL cross search
 Similar articles in CSDL Cross Search
 [刘喆]‘s Articles
 [李晋闽]‘s Articles
 [王军喜]‘s Articles
Scirus search
 Similar articles in Scirus
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0! Copyright © 2007-2012  中国科学院半导体研究所  -Feedback
Technical Support Lanzhou Branch of National Science Library, Chinese Academy of Sciences
Based on DSpace by MIT and Hewlett-Packard