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单芯片多电极调控多波长发光二极管结构及制备方法
赵博; 李晋闽; 伊晓燕; 郭金霞; 马骏; 刘志强
Rights Holder中国科学院半导体所
Date Available2016-09-28
Country中国
Subtype发明
Subject Area半导体器件
Application Date2015-01-07
Application NumberCN201510006038.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27620
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
赵博,李晋闽,伊晓燕,等. 单芯片多电极调控多波长发光二极管结构及制备方法.
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