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一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法
赵丹梅; 赵德刚; 江德生; 刘宗顺; 陈平
Rights Holder中国科学院半导体所
Date Available2016-09-02
Country中国
Subtype发明
Subject Area光电子学
Application Date2014-07-16
Application NumberCN201410337785.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27351
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
赵丹梅,赵德刚,江德生,等. 一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法.
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