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一种新型GaN基增强型HEMT器件及其制备方法
贾利芳; 何志; 刘志强; 李迪; 樊中朝; 程哲; 梁亚楠; 王晓东; 杨富华
Rights Holder中国科学院半导体所
Date Available2016-08-30
Country中国
Subtype发明
Subject Area微电子学
Application Date2014-11-28
Application NumberCN201410710282.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27271
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
贾利芳,何志,刘志强,等. 一种新型GaN基增强型HEMT器件及其制备方法.
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