SEMI OpenIR  > 中科院半导体照明研发中心
转移衬底的氮化镓基高电子迁移率晶体管制作的方法
纪攀峰; 谢海忠; 郭恩卿; 马平; 张韵; 王军喜; 李晋闽
Rights Holder中国科学院半导体所
Date Available2016-08-30
Country中国
Subtype发明
Subject Area半导体器件
Application Date2014-12-24
Application NumberCN201410816561.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27265
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
纪攀峰,谢海忠,郭恩卿,等. 转移衬底的氮化镓基高电子迁移率晶体管制作的方法.
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