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低损伤GaN基LED芯片的制作方法
李璟; 王国宏; 孔庆峰; 詹腾
Rights Holder中国科学院半导体研究所
Date Available2013-05-22
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-03-04
Application NumberCN201310067790.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25856
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
李璟,王国宏,孔庆峰,等. 低损伤GaN基LED芯片的制作方法.
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