SEMI OpenIR  > 中科院半导体材料科学重点实验室
硅基高迁移率InGaAs沟道的环栅MOSFET制备方法
周旭亮; 于红艳; 李梦珂; 潘教青; 王圩
Rights Holder中国科学院半导体研究所
Date Available2013-10-09
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-07-22
Application NumberCN201310306847.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25832
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
周旭亮,于红艳,李梦珂,等. 硅基高迁移率InGaAs沟道的环栅MOSFET制备方法.
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