SEMI OpenIR  > 中科院半导体照明研发中心
氮化物半导体发光二极管外延片、器件及其制备方法
闫建昌; 王军喜; 张韵; 丛培沛; 孙莉莉; 董鹏; 田迎冬; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2014-05-21
Country中国
Subtype发明
Subject Area半导体器件
Application Date2014-02-19
Application NumberCN201410056782.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25746
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
闫建昌,王军喜,张韵,等. 氮化物半导体发光二极管外延片、器件及其制备方法.
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