SEMI OpenIR  > 中科院半导体材料科学重点实验室
用于SiC基MOS器件栅介质薄膜的制备方法
张峰; 赵万顺; 王雷; 刘兴昉; 孙国胜; 曾一平
Rights Holder中国科学院半导体研究所
Date Available2014-06-25
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-04-03
Application NumberCN201410132967.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25728
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
张峰,赵万顺,王雷,等. 用于SiC基MOS器件栅介质薄膜的制备方法.
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用于SiC基MOS器件栅介质薄膜的制备方(290KB) 限制开放LicenseApplication Full Text
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