SEMI OpenIR  > 中科院半导体材料科学重点实验室
直接在Si衬底上自催化生长InAsSb纳米线的方法
杜文娜; 杨晓光; 王小耶; 杨涛; 王占国
Rights Holder中国科学院半导体研究所
Date Available2014-07-23
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-04-21
Application NumberCN201410160279.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25707
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
杜文娜,杨晓光,王小耶,等. 直接在Si衬底上自催化生长InAsSb纳米线的方法.
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