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改进p-GaN薄膜欧姆接触的材料结构及其制备方法
吴亮亮; 赵德刚; 江德生; 刘宗顺; 陈平; 李亮; 乐伶聪; 杨辉
Rights Holder中国科学院半导体研究所
Date Available2013-05-01
Country中国
Subtype发明
Subject Area光电子学
Application Date2013-01-18
Application NumberCN201310020078.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25698
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
吴亮亮,赵德刚,江德生,等. 改进p-GaN薄膜欧姆接触的材料结构及其制备方法.
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