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含有变In组分InGaN/GaN多层量子阱结构的太阳能电池
杨静; 赵德刚; 李亮; 吴亮亮; 乐伶聪; 李晓静; 何晓光
Rights Holder中国科学院半导体研究所
Date Available2013-05-08
Country中国
Subtype发明
Subject Area光电子学
Application Date2013-01-28
Application NumberCN201310031285.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25667
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
杨静,赵德刚,李亮,等. 含有变In组分InGaN/GaN多层量子阱结构的太阳能电池.
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