SEMI OpenIR  > 半导体集成技术工程研究中心
ICP干法刻蚀工艺制备剖面为正梯形的台面的方法
徐晓娜; 胡传贤; 樊中朝; 王晓东; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2013-08-21
Country中国
Subtype发明
Subject Area微电子学
Application Date2013-05-08
Application NumberCN201310166137.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25621
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
徐晓娜,胡传贤,樊中朝,等. ICP干法刻蚀工艺制备剖面为正梯形的台面的方法.
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ICP干法刻蚀工艺制备剖面为正梯形的台面(1075KB) 限制开放LicenseApplication Full Text
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