SEMI OpenIR  > 中科院半导体照明研发中心
氮化镓系发光二极管及制备方法
马平; 刘波亭; 甄爱功; 郭仕宽; 纪攀峰; 王军喜; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2014-02-12
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-11-14
Application NumberCN201310566095.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25481
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
马平,刘波亭,甄爱功,等. 氮化镓系发光二极管及制备方法.
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氮化镓系发光二极管及制备方法.pdf(548KB) 限制开放LicenseApplication Full Text
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