SEMI OpenIR  > 纳米光电子实验室
钝化InAs/GaSb二类超晶格红外探测器制作方法
曹玉莲; 马文全; 张艳华
Rights Holder中国科学院半导体研究所
Date Available2012-07-11
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-02-02
Application NumberCN201210023049.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25389
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
曹玉莲,马文全,张艳华. 钝化InAs/GaSb二类超晶格红外探测器制作方法.
Files in This Item:
File Name/Size DocType Version Access License
钝化InAs_GaSb二类超晶格红外探测(607KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[曹玉莲]'s Articles
[马文全]'s Articles
[张艳华]'s Articles
Baidu academic
Similar articles in Baidu academic
[曹玉莲]'s Articles
[马文全]'s Articles
[张艳华]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[曹玉莲]'s Articles
[马文全]'s Articles
[张艳华]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.