SEMI OpenIR  > 中科院半导体材料科学重点实验室
ZnO纳米棒发光二极管及其制作方法
施辉东; 张兴旺; 张曙光; 尹志岗; 董敬敬; 刘鑫
Rights Holder中国科学院半导体研究所
Date Available2012-08-01
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-04-11
Application NumberCN201210105020.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25302
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
施辉东,张兴旺,张曙光,等. ZnO纳米棒发光二极管及其制作方法.
Files in This Item:
File Name/Size DocType Version Access License
ZnO纳米棒发光二极管及其制作方法.pd(264KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[施辉东]'s Articles
[张兴旺]'s Articles
[张曙光]'s Articles
Baidu academic
Similar articles in Baidu academic
[施辉东]'s Articles
[张兴旺]'s Articles
[张曙光]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[施辉东]'s Articles
[张兴旺]'s Articles
[张曙光]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.