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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中科院半导体材料科... [11]
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张兴旺 [4]
谭海仁 [3]
张曙光 [3]
尹志岗 [3]
游经碧 [2]
范亚明 [1]
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表面等离激元增强 ZnO 基 LEDs 电致发光研究
学位论文
, 北京: 中国科学院研究生院, 2013
Authors:
张曙光
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View/Download:943/79
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Submit date:2013/06/20
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 2, 页码: Article no.23716
Authors:
Ying J
;
Zhang XW
;
Yin ZG
;
Tan HR
;
Zhang SG
;
Fan YM
;
Ying, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn
Adobe PDF(344Kb)
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View/Download:1460/371
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Submit date:2011/07/05
High-pressure Synthesis
Vapor-deposition
Nucleation
Emission
Diamond
Growth
Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation
期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 102002
Authors:
Tan, Hairen
;
You, Jingbi
;
Zhang, Shuguang
;
Gao, Hongli
;
Yin, Zhigang
;
Bai, Yiming
;
Zhang, Xiulan
;
Zhang, Xingwang
;
Qu, Sheng
;
Tan, H.(hrtan@semi.ac.cn)
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View/Download:805/182
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Submit date:2012/06/14
Metallic Films
Plasmons
Silicides
Zinc Oxide
Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure
期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 8, 页码: Art. No. 083701
Authors:
You JB
;
Zhang XW
;
Zhang SG
;
Tan HR
;
Ying J
;
Yin ZG
;
Zhu QS
;
Chu PK (Chu Paul K.)
;
Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn
;
paul.chu@cityu.edu.hk
Adobe PDF(384Kb)
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Submit date:2010/05/24
Light-emitting-diodes
Spectroscopy
Epitaxy
Growth
Film
Sio2
增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法
专利
专利类型: 发明, 专利号: CN102394263A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:
尹志岗
;
张曙光
;
张兴旺
;
董敬敬
;
高红丽
;
施辉东
Adobe PDF(416Kb)
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Submit date:2012/09/09
增强ZnO基发光二极管紫光电致发光性能的方法
专利
专利类型: 发明, 专利号: CN102394264A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:
张兴旺
;
张曙光
;
尹志岗
;
董敬敬
;
高红丽
;
施辉东
Adobe PDF(399Kb)
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View/Download:809/183
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Submit date:2012/09/09
图案化纳米模板及其制备方法
专利
专利类型: 发明, 专利号: CN201010520234.0, 公开日期: 2011-08-31
Inventors:
董敬敬
;
张兴旺
;
尹志岗
;
谭海仁
;
高云
;
张曙光
;
白一鸣
Adobe PDF(1544Kb)
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Submit date:2011/08/31
制作ZnO基异质结发光二极管的方法
专利
专利类型: 发明, 专利号: CN201010183370.5, 公开日期: 2011-08-31
Inventors:
张曙光
;
尹志岗
;
张兴旺
;
游经碧
Adobe PDF(319Kb)
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View/Download:986/233
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Submit date:2011/08/31
改善n-ZnO/AlN/p-GaN异质结发光二极管电致发光性能的方法
专利
专利类型: 发明, 专利号: CN102130229A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:
张曙光
;
张兴旺
;
尹志岗
;
董敬敬
;
游经碧
Adobe PDF(422Kb)
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View/Download:1084/244
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Submit date:2012/09/09
一种提高聚合物太阳能电池效率的方法
专利
专利类型: 发明, 公开日期: 2013-10-02
Inventors:
高红丽
;
张兴旺
;
张曙光
;
尹志岗
;
吴金良
Adobe PDF(347Kb)
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View/Download:313/77
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Submit date:2014/11/17