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发光二极管的制备方法; 发光二极管的制备方法
孙莉莉; 闫建昌; 王军喜
Rights Holder中国科学院半导体研究所
Date Available2012-09-09 ; 2012-09-09 ; 2012-09-09
Country中国
Subtype发明
Abstract 一种发光二极管的制备方法,包括如下步骤:步骤1:在衬底上外延N型GaN薄膜;步骤2:在N型GaN薄膜上沉积掩膜;步骤3:通过刻蚀或腐蚀工艺,在掩膜上制备SiO2网格,形成基片;步骤4:对基片进行清洗;步骤5:将清洗后的基片放入MOCVD设备,在SiO2网格内依次外延生长N型GaN层、量子阱层、AlGaN电子阻挡层和P型GaN层;步骤6:腐蚀去掉SiO2网格;步骤7:在P型GaN层上形成ITO层;步骤8:在ITO层上形成P电极;步骤9:在N型GaN层上形成N电极,完成器件的制备。
metadata_83中科院半导体照明研发中心
Patent NumberCN102130230A
Language中文
Status公开
Application Number CN201010610360.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/23518
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
孙莉莉,闫建昌,王军喜. 发光二极管的制备方法, 发光二极管的制备方法. CN102130230A.
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