SEMI OpenIR  > 中科院半导体材料科学重点实验室
硅掺杂的砷化铟/砷化镓量子点太阳电池的制作方法; 硅掺杂的砷化铟/砷化镓量子点太阳电池的制作方法
王科范; 杨晓光; 杨涛; 王占国
Rights Holder中国科学院半导体研究所
Date Available2012-09-09 ; 2012-09-09 ; 2012-09-09
Country中国
Subtype发明
Abstract 一种硅掺杂的砷化铟/砷化镓量子点太阳电池的制作方法,包括如下步骤:步骤1:选择一n+型GaAs单晶片作为衬底;步骤2:在n+型GaAs单晶片上依次生长n型GaAs层和本征GaAs缓冲层;步骤3:在本征GaAs缓冲层上生长多个周期的量子点结构,作为电池的i吸收层;步骤4:在多个周期的量子点结构上依次生长本征GaAs层、p型GaAs层、p+型GaAs层、p型Al0.4Ga0.6As层和p型GaAs层;步骤5:在p型GaAs层上生长ZnS/MgF2层;步骤6:在ZnS/MgF2层上生长并制作上金属电极;步骤7:在n+型GaAs单晶片的下表面制作下金属电极;步骤8:对电池组件进行封装,完成太阳电池的制作。
metadata_83中科院半导体材料科学重点实验室
Patent NumberCN102130206A
Language中文
Status公开
Application Number CN201010602219.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/23491
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
王科范,杨晓光,杨涛,等. 硅掺杂的砷化铟/砷化镓量子点太阳电池的制作方法, 硅掺杂的砷化铟/砷化镓量子点太阳电池的制作方法. CN102130206A.
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