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采用金属氧化物掺杂作为空穴注入结构的有机发光二极管
李林森; 关敏; 曹国华; 曾一平; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种采用金属氧化物掺杂作为空穴注入结构的有机发光二极管,包括:一透明阳极;一有机空穴注入层,该有机空穴注入层沉积在所述透明阳极上,该有机空穴注入层的面积小于透明阳极的面积;一有机空穴传输层,该有机空穴传输层沉积在所述有机空穴注入层上;一有机发光层,该有机发光层沉积在所述有机空穴传输层上;一有机电子传输层,该有机电子传输层沉积在所述有机发光层上;一阴极,该阴极沉积在所述有机电子传输层上,该阴极的面积小于有机电子传输层的面积。
metadata_83中科院半导体照明研发中心
Patent NumberCN200910077680.6
Language中文
Status公开
Application NumberCN200910077680.6
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22171
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
李林森,关敏,曹国华,等. 采用金属氧化物掺杂作为空穴注入结构的有机发光二极管. CN200910077680.6.
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