High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability | |
Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Chen LH (Chen Liang-Hui) | |
2010 | |
Conference Name | Conference on Semiconductor Lasers and Applications IV |
Source Publication | Proceedings of SPIE-The International Society for Optical Engineering vol.7844: Art. No. 784404 2010 |
Conference Date | OCT 18-19, 2010 |
Conference Place | Beijing, PEOPLES R CHINA |
Subject Area | 光电子学 |
Indexed By | CPCI(ISTP) |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/21418 |
Collection | 纳米光电子实验室 |
Recommended Citation GB/T 7714 | Cao YL ,Xu PF ,Ji HM ,et al. High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability[C],2010. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
784404.pdf(374KB) | 限制开放 | License | Application Full Text |
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