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题名: Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
作者: Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH
出版日期: 2001
会议日期: SEP 11-15, 2000
摘要: We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.
会议名称: 11th International Conference on Molecular Beam Epitaxy (MBE-XI)
KOS主题词: Adsorption;  characterization;  Radiation;  atomic layer deposition;  Nitrides;  Quantum wells;  Operation;  Rangelands;  Range of data
会议文集: JOURNAL OF CRYSTAL GROWTH, 227
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Pan Z; Li LH; Zhang W; Wang XU; Lin YW; Wu RH .Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 227,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2001,516-520
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