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题名: New way to enhance the uniformity of self-organized InAs quantum dots
作者: Zhu HJ;  Wang H;  Wang ZM;  Cui LQ;  Feng SL
出版日期: 1999
会议日期: OCT 12-16, 1998
摘要: Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.
会议名称: 25th International Symposium on Compound Semiconductors
KOS主题词: atomic layer deposition;  Threshold;  Development;  Lasers
会议文集: COMPOUND SEMICONDUCTORS 1998, (162)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhu HJ; Wang H; Wang ZM; Cui LQ; Feng SL .New way to enhance the uniformity of self-organized InAs quantum dots .见:IOP PUBLISHING LTD .COMPOUND SEMICONDUCTORS 1998, (162),DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND ,1999,433-437
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