New way to enhance the uniformity of self-organized InAs quantum dots

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	New way to enhance the uniformity of self-organized InAs quantum dots
	Zhu HJ; Wang H; Wang ZM; Cui LQ; Feng SL; Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
	1999
会议名称	25th International Symposium on Compound Semiconductors
会议录名称	COMPOUND SEMICONDUCTORS 1998, (162)
页码	433-437
会议日期	OCT 12-16, 1998
会议地点	NARA, JAPAN
出版地	DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
出版者	IOP PUBLISHING LTD
ISSN	0951-3248
ISBN	0-7503-0611-4
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.
关键词	Molecular-beam Epitaxy Threshold Growth Laser
学科领域	半导体物理
主办者	Inst Electr, Informat & Commun Engineers Japan.; IEEE Electron Devices Soc.; IEEE Lasers & Electro Opt Soc.; Japan Soc Appl Phys.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14887
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhu HJ,Wang H,Wang ZM,et al. New way to enhance the uniformity of self-organized InAs quantum dots[C]. DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND:IOP PUBLISHING LTD,1999:433-437.

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