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题名: Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy
作者: Li GH;  Fang ZL;  Su FH;  Ma BS;  Ding K;  Han HX;  Sou IK;  Ge WK
出版日期: 2003
会议日期: AUG 05-08, 2002
摘要: The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition.
会议名称: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X)
KOS主题词: Light--Transmission;  Light absorption;  transition;  Cell phone services industry;  Telecommunication--Standards
会议文集: PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Li GH; Fang ZL; Su FH; Ma BS; Ding K; Han HX; Sou IK; Ge WK .Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy .见:WILEY-V C H VERLAG GMBH .PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2),PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY ,2003,401-406
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