Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy

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	Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy
	Li GH; Fang ZL; Su FH; Ma BS; Ding K; Han HX; Sou IK; Ge WK; Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
	2003
会议名称	10th International Conference on High Pressures in Semiconductor Physics (HPSP-X)
会议录名称	PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2)
页码	401-406
会议日期	AUG 05-08, 2002
会议地点	GUILDFORD, ENGLAND
出版地	PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	0370-1972
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, kowloon, hong kong, peoples r china
摘要	The photoluminescence from ZnS1-xTex alloy with 0 < x < 0.3 was investigated under hydrostatic pressure up to 7 GPa. Two peaks were observed in the alloys with x < 0.01, which are related to excitons bound to isolated Te isoelectronic impurities (Te-1 centers) and Te pairs (Te-2 centers), respectively. Only the Te-2 related emissions were observed in the alloys with 0.01 < x < 0.03. The emissions in the alloys with 0.03 < x < 0.3 are attributed to the excitons bound to the Te-n (n greater than or equal to 3) cluster centers. The pressure coefficient of the Te-1 related peak is 89(4) meV/GPa, about 40% larger than that of the band gap of ZnS. On the other hand, the pressure coefficient of the Te-2 related emissions is only 52(4) meV/GPa, about 15% smaller than that of the ZnS band gap. A simple Koster-Slater model has been used to explain the different pressure behavior of the Te-1 and Te-2 centers. The pressure coefficient of the Te-3 centers is 62(2) meV/GPa. Then the pressure coefficients of the Te-n centers decrease rapidly with further increasing Te composition.
关键词	Optical-absorption Zns-te Transition Edge
学科领域	半导体物理
主办者	会议主办方: UNIV SURREY
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14861
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Li GH,Fang ZL,Su FH,et al. Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy[C]. PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2003:401-406.

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