Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

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	Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
	Wang QY; Wang JH; Deng HF; Lin LY; Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
	2003
会议名称	IUMRS/ICEM 2002 Conference
会议录名称	MICROELECTRONIC ENGINEERING, 66 (1-4)
页码	333-339
会议日期	JUN 10-14, 2002
会议地点	XIAN, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0167-9317
部门归属	chinese acad sci, inst semicond, mat sci ctr, beijing 100083, peoples r china
摘要	Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词	Neutron Irradiation Annealing Defects In Silicon Spectra
学科领域	半导体材料
主办者	Chinese Mat Res Soc.; Int Union Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14851
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang QY,Wang JH,Deng HF,et al. Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2003:333-339.

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