Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
Wang QY; Wang JH; Deng HF; Lin LY; Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
2003
会议名称IUMRS/ICEM 2002 Conference
会议录名称MICROELECTRONIC ENGINEERING, 66 (1-4)
页码333-339
会议日期JUN 10-14, 2002
会议地点XIAN, PEOPLES R CHINA
出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者ELSEVIER SCIENCE BV
ISSN0167-9317
部门归属chinese acad sci, inst semicond, mat sci ctr, beijing 100083, peoples r china
摘要Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词Neutron Irradiation Annealing Defects In Silicon Spectra
学科领域半导体材料
主办者Chinese Mat Res Soc.; Int Union Mat Res Soc.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14851
专题中国科学院半导体研究所(2009年前)
通讯作者Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
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Wang QY,Wang JH,Deng HF,et al. Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2003:333-339.
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