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| Hydrogen related defects in InP | |
| Han YJ; Liu XL; Jiao JH; Lin LY; Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. | |
| 1998 | |
| 会议名称 | Symposium on Light Emitting Devices for Optoelectronic Applications / 28th State-of-the-Art Program on Compound Semiconductors at 193th Electrochemical-Soc Meeting |
| 会议录名称 | PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 98 (2) |
| 页码 | 351-358 |
| 会议日期 | MAY 03-08, 1998 |
| 会议地点 | SAN DIEGO, CA |
| 出版地 | 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA |
| 出版者 | ELECTROCHEMICAL SOCIETY INC |
| ISBN | 1-56677-194-3 |
| 部门归属 | chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| 摘要 | Local vibrational modes(LVMs) in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atom(s) and isolated hydrogen or hydrogen dimers and complexes of hydrogen with various impurities and intrinsic defects are investigated by FTIR. Especially hydrogen related complexes between various transition metals and hydrogen or hydrogen related complexes between hydrogen with point defects. New LVMs related to hydrogen will be reported in this paper. Dynamical formation mechanism of defects in the annealed nominally undoped semiinsulating InP obtained by high pressure, high temperature annealing of ultra purity materials is proposed. Hydrogen can acts as actuator for antistructure defects production. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effects are discussed. |
| 学科领域 | 半导体材料 |
| 主办者 | Electrochem Soc, Electr Div. |
| 收录类别 | CPCI-S |
| 语种 | 英语 |
| 文献类型 | 会议论文 |
| 条目标识符 | http://ir.semi.ac.cn/handle/172111/13879 |
| 专题 | 中国科学院半导体研究所（2009年前） |
| 通讯作者 | Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. |
| 推荐引用方式 GB/T 7714 | Han YJ,Liu XL,Jiao JH,et al. Hydrogen related defects in InP[C]. 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA:ELECTROCHEMICAL SOCIETY INC,1998:351-358. |
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