The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process

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	The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process
	Zheng LX; Liang JW; Yang H; Li JB; Wang YT; Xu DP; Li XF; Duan LH; Hu XW; Zheng LX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1998
会议名称	Symposium on Nitride Semiconductors, at the 1997 MRS Fall Meeting
会议录名称	NITRIDE SEMICONDUCTORS, 482
页码	69-74
会议日期	DEC 01-05, 1997
会议地点	BOSTON, MA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-387-8
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.
学科领域	半导体材料
主办者	Mat Res Soc.; Aixtron Semiconductor Technol GmbH.; Bede Sci Inc.; EMCORE.; Lake Shore Cryotron Inc.; Morton Int.; MMR Technol Inc.; Nichia Chem Ind.; Renishaw PLC.; Rockwell Int.; Siemens.; SULA Technol.; SVT Assoc Inc.; Thomas Swan & Co Ltd.; Toyoda Gosel Co Ltd.; Xerox Palo Alto Res Ctr.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13871
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zheng LX Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zheng LX,Liang JW,Yang H,et al. The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1998:69-74.

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