高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 会议论文

题名: The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process
作者: Zheng LX;  Liang JW;  Yang H;  Li JB;  Wang YT;  Xu DP;  Li XF;  Duan LH;  Hu XW
出版日期: 1998
会议日期: DEC 01-05, 1997
摘要: High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.
会议名称: Symposium on Nitride Semiconductors, at the 1997 MRS Fall Meeting
会议文集: NITRIDE SEMICONDUCTORS, 482
专题: 中国科学院半导体研究所(2009年前)_会议论文

条目包含的文件

文件 大小格式
3038.pdf341KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Zheng LX; Liang JW; Yang H; Li JB; Wang YT; Xu DP; Li XF; Duan LH; Hu XW .The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process .见:MATERIALS RESEARCH SOCIETY .NITRIDE SEMICONDUCTORS, 482,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,1998,69-74
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Zheng LX]的文章
 [Liang JW]的文章
 [Yang H]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Zheng LX]的文章
 [Liang JW]的文章
 [Yang H]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发