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题名: Dynamics of formation of defects in annealed InP
作者: Han YJ;  Liu XL;  Jiao JH;  Lin LY
出版日期: 1998
会议日期: SEP 18-19, 1998
摘要: Dynamics of formation of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Incorporated hydrogen passivates vacancy at indium site from annihilation forming fully hydrogenated indium vacancy which dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.
会议名称: Conference on Integrated Optoelectronics II
会议文集: INTEGRATED OPTOELECTRONICS II, 3551
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Han YJ; Liu XL; Jiao JH; Lin LY .Dynamics of formation of defects in annealed InP .见:SPIE-INT SOC OPTICAL ENGINEERING .INTEGRATED OPTOELECTRONICS II, 3551,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,5-8
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