Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes
	Wang GH; Ma XY; Zhang YF; Wang ST; Li YZ; Chen LH; Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices Beijing 100083 Peoples R China.
	2000
会议名称	4th Conference on Light-Emitting Diodes (LEDs)
会议录名称	LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IV, 3938
页码	154-157
会议日期	JAN 26-27, 2000
会议地点	SAN JOSE, CA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3555-4
部门归属	chinese acad sci, inst semicond, natl engn res ctr optoelect devices, beijing 100083, peoples r china
摘要	Native Oxide AlAs layer were employed to block the current injection from the tup anode. The luminous intensity exceeded 75 mcd of the LED chip with native oxide AlAs layer sandwiched 5 mu m AlGaAs current spreading layer under 20 mA current injection. Electrical and optical properties the LED chip and plastically sealed lamp were measured. Aging of the LED chip and lamp were performed under 70 degrees C and room temperature, Experiment results shown that there is no apparent effect of the native oxided AlAs layer and the process on the reliability of the LED devices.
关键词	Native Oxided Alas Current Blocking Layer Algainp High Brightness Light Emitting Diodes
学科领域	光电子学
主办者	USA Res Off.; AIXTRON Inc.; SPIE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13771
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang GH,Ma XY,Zhang YF,et al. Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:154-157.