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650nm AlGaInP quantum well lasers for the application of DVD | |
Chen LH; Ma XY; Guo L; Ma J; Ding HY; Cao Q; Wang LM; Zhang GZ; Yang YL; Wang GH; Tan MQ; Chen LH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. | |
1999 | |
Conference Name | SPIE Conference on Photonics Technology into the 21st Century - Semiconductors, Microstructures, and Nanostructures |
Source Publication | PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899 |
Pages | 367-373 |
Conference Date | DEC 01-03, 1999 |
Conference Place | SINGAPORE, SINGAPORE |
Publication Place | 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
Publisher | SPIE-INT SOC OPTICAL ENGINEERING |
ISSN | 0277-786X |
ISBN | 0-8194-3501-5 |
metadata_83 | chinese acad sci, inst semicond, beijing 100083, peoples r china |
Abstract | Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm(2) respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about -130db/Hz, The samples of LD have been certified by PUH manufacturers. |
Keyword | Dvd Laser Diode Visible Algainp Mocvd Operation Diodes |
Subject Area | 光电子学 |
Funding Organization | SPIE.; Nanyang Technol Univ.; SPIE, Singapore Chapter.; Inst Phys.; USAF, Asian Off Aerosp Res & Dev.; USA, Res Off Far E. |
Indexed By | CPCI-S |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/13761 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Chen LH Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. |
Recommended Citation GB/T 7714 | Chen LH,Ma XY,Guo L,et al. 650nm AlGaInP quantum well lasers for the application of DVD[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1999:367-373. |
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