Residual donors in undoped LEC InP

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Residual donors in undoped LEC InP
	Zhao YW; Sun NF; Sun TN; Lin LY; Wu XW; Guo WL; Wu X; Bi KY; Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
	2000
Conference Name	11th International Semiconducting and Insulating Materials Conference (SIMC-XI)
Source Publication	SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS
Pages	179-182
Conference Date	JUL 03-07, 2000
Conference Place	CANBERRA, AUSTRALIA
Publication Place	345 E 47TH ST, NEW YORK, NY 10017 USA
Publisher	IEEE
ISBN	0-7803-5815-5
metadata_83	chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
Abstract	Undoped liquid encapsulated Czochralski (LEC) InP samples have been studied by Hall effect, glow discharge mass spectroscopy (GDMS) and infrared absorption spectroscopy. A systematic discrepancy has been found between the Han electron concentration and net donor concentration measured by GDMS. The electron concentration is always higher than the net shallow donor concentration by about (3-6)x10(15)cm(-3). A hydrogen indium vacancy complex donor defect VInH4 was detected regularly by infrared absorption spectroscopy in all undoped LEC InP samples. The fact can be explained by taking into account the existence of the donor defect in as-grown undoped LEC-InP.
Keyword	Indium-phosphide Carbon Defects Growth
Subject Area	半导体材料
Funding Organization	IEEE Electron Devices Soc.; Australian Natl Univ.; AIXTRON.; Oxford Instruments Plasma Technol.; Ledex Corp.; IEEE ACT Sect.; IEEE Electron Devices Soc, Australian Chapter.; Lasers & Electro-Opt Soc.; Australian Mat Res Soc.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/13747
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Zhao YW,Sun NF,Sun TN,et al. Residual donors in undoped LEC InP[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2000:179-182.

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