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题名: MOCVD growth of cubic GaN: Materials and devices
作者: Yang H;  Zhang SM;  Xu DP;  Li SF;  Zhao DG;  Fu Y;  Sun YP;  Feng ZH;  Zheng LX
出版日期: 2000
会议日期: SEP 24-27, 2000
摘要: Many impressive progresses have been made recently on the growth of cubic-phase GaN by MBE and MOCVD. In this paper, some of our recent progress will be reviewed, including the growth of high quality cubic InGaN films, InGaN/GaN heterostructure blue and green LEDs. Cubic-phase GaN films were grown on GaAs (100) substrates by MOCVD. Growth conditions were optimized to obtain pure cubic phase GaN films up to a thickness of 4 mum. An anomalous compressive strain was found in the as-grown GaN films in spite of a smaller lattice constant for GaN compared with that of GaAs substrates. The photoluminescence FWHM of high quality InGaN epilayers was less than 100 meV The InGaN/GaN heterostructure blue LED has intense electroluminescence with a FWHM of 20 nm.
会议名称: International Workshop on Nitride Semiconductors (IWN 2000)
KOS主题词: atomic layer deposition;  Cubic;  Light emitting diodes;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  atomic layer deposition;  Gallium nitride;  Electroluminescence;  Sphalerite;  wurtzite;  atomic layer deposition
会议文集: PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Yang H; Zhang SM; Xu DP; Li SF; Zhao DG; Fu Y; Sun YP; Feng ZH; Zheng LX .MOCVD growth of cubic GaN: Materials and devices .见:INST PURE APPLIED PHYSICS .PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1,DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN ,2000,64-69
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