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题名: Optical transitions in GaNAs/GaAs single quantum well
作者: Luo XD;  Xu ZY;  Sun BQ;  Pan Z;  Li LH;  Lin YW;  Ge WK
出版日期: 2000
会议日期: SEP 24-27, 2000
摘要: We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].
会议名称: International Workshop on Nitride Semiconductors (IWN 2000)
KOS主题词: Photoluminescence;  Band offset;  atomic layer deposition;  Alloys;  Temperature
会议文集: PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Luo XD; Xu ZY; Sun BQ; Pan Z; Li LH; Lin YW; Ge WK .Optical transitions in GaNAs/GaAs single quantum well .见:INST PURE APPLIED PHYSICS .PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1,DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN ,2000,677-680
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