Optimization of InGaAs quantum dots for optoelectronic applications

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optimization of InGaAs quantum dots for optoelectronic applications
	Duan RF; Wang BQ; Zhu ZP; Zeng YP; Duan RF Chinese Acad Sci Novel Mat Dept Inst Semicond Beijing 100083 Peoples R China.
	2002
会议名称	27th International Conference on Infrared and Millimeter Waves
会议录名称	TWENTY SEVENTH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES, CONFERENCE DIGEST
页码	81-82
会议日期	SEP 22-26, 2002
会议地点	SAN DIEGO, CA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-7423-1
部门归属	chinese acad sci, novel mat dept, inst semicond, beijing 100083, peoples r china
摘要	Quantum dot infrared photodetectors (QDIP) are in the center of research interest nowadays. However the real QDIP is inferior to those predicted in theory, in which the dot density is much higher than those reported. Through optimizing the growth conditions, we realized the control of high-density quantum dot growth. This will be very useful for future QDIP development.
关键词	Infrared Photodetectors
学科领域	半导体材料
主办者	Gen Atom.; PSFC.; IEEE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13705
专题	中国科学院半导体研究所（2009年前）
通讯作者	Duan RF Chinese Acad Sci Novel Mat Dept Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Duan RF,Wang BQ,Zhu ZP,et al. Optimization of InGaAs quantum dots for optoelectronic applications[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2002:81-82.

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