GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy
	Pan Z; Li LH; Wang XY; Lin YW; Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	Conference on Optoelectronic and Microelectronic Materials and Devices
会议录名称	COMMAD 2000 PROCEEDINGS
页码	491-496
会议日期	DEC 06-08, 2000
会议地点	BUNDOORA, AUSTRALIA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-6698-0
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	The growth of GaInNAs/GaAs quantum wells (QW) was investigated by solid-source molecular beam epitaxy. N was introduced by a dc-active plasma source. The effect of growth conditions such as on the N incorporation and photoluminescence (PL) intensity of the QWs has been studied. The PL peak intensity decreased and the PL fun width at half maximum increased with increasing N concentrations. The highest N concentration of 2.6% in a GaInNAs/GaAs QW was obtained, and corresponding to a PL peak wavelength of 1.57 mum at 10K. Rapid thermal annealing at 850degreesC significantly improved the crystal quality of the QWs. An optimum annealing time of 5s at 850degreesC was obtained. A GaInNAs/GaAs SQW laser with the emitting wavelength of 1.2 mum and a high characteristic temperature of 115 K was achieved at room temperature.
关键词	Operation 会议主办方: La Trobe Univ Depts Electr Engn & Phys
学科领域	半导体材料
主办者	IEEE Electron Devices Soc.; IEEE Lasers & Electron Opt Soc.; IEEE Australia Chapter.; Lasers & Electron Opt Soc.; Australian Mat Res Soc.; Australian Inst Phys.; Philips Analyt.; Balzers Scitek Pty Ltd.; Heys Technologies Int Pty Ltd.; Oxford Instruments, Plasma Technol Grp.; Stanton Sci.; Thermo Optek (Australia) Pty Ltd.; Melbourne Convent & Marketing Bur.; La Trobe Univ, Ctr Mat & Surface Sci.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13697
专题	中国科学院半导体研究所（2009年前）
通讯作者	Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Pan Z,Li LH,Wang XY,et al. GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2000:491-496.

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