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题名: GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy
作者: Pan Z;  Li LH;  Wang XY;  Lin YW
出版日期: 2000
会议日期: DEC 06-08, 2000
摘要: The growth of GaInNAs/GaAs quantum wells (QW) was investigated by solid-source molecular beam epitaxy. N was introduced by a dc-active plasma source. The effect of growth conditions such as on the N incorporation and photoluminescence (PL) intensity of the QWs has been studied. The PL peak intensity decreased and the PL fun width at half maximum increased with increasing N concentrations. The highest N concentration of 2.6% in a GaInNAs/GaAs QW was obtained, and corresponding to a PL peak wavelength of 1.57 mum at 10K. Rapid thermal annealing at 850degreesC significantly improved the crystal quality of the QWs. An optimum annealing time of 5s at 850degreesC was obtained. A GaInNAs/GaAs SQW laser with the emitting wavelength of 1.2 mum and a high characteristic temperature of 115 K was achieved at room temperature.
会议名称: Conference on Optoelectronic and Microelectronic Materials and Devices
KOS主题词: Operation
会议文集: COMMAD 2000 PROCEEDINGS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Pan Z; Li LH; Wang XY; Lin YW .GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy .见:IEEE .COMMAD 2000 PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2000,491-496
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