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题名: 1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors
作者: Zhang W;  Pan Z;  Li LH;  Zhang RK;  Lin YW;  Wu RG
出版日期: 2001
会议日期: NOV 12-15, 2001
摘要: A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetector operating at 1.3 mum with the full-width at half-maximum of 5.5 nm was demonstrated. The GaInNAs RCE photodetector was grown by molecular-beam epitaxy using an ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature that is very beneficial for applications in long-wavelength absorption devices. For a 100-mum diameter RCE photodetector, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3-dB bandwidth is 308 MHz. The reasons resulting in the poor high speed property were analyzed. The tunable wavelength of 18 nm with the angle of incident light was observed.
会议名称: Asia-Pacific Optical and Wireless Communications Conference (APOC 2001)
KOS主题词: photodetector;  atomic layer deposition;  Performance;  Efficiency;  Operation;  band width;  Design;  Metric system;  Silicon
会议文集: APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Zhang W; Pan Z; Li LH; Zhang RK; Lin YW; Wu RG .1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors .见:SPIE-INT SOC OPTICAL ENGINEERING .APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2001,225-231
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