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题名: Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing
作者: Xu YQ;  Li LH;  Pan Z;  Lin YW;  Wang QM
出版日期: 2001
会议日期: NOV 12-15, 2001
摘要: The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650degreesC and 900degreesC. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.
会议名称: Asia-Pacific Optical and Wireless Communications Conference (APOC 2001)
KOS主题词: atomic layer deposition;  Chrysanthemum morifolium
会议文集: APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Xu YQ; Li LH; Pan Z; Lin YW; Wang QM .Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing .见:SPIE-INT SOC OPTICAL ENGINEERING .APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2001,159-166
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