The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650degreesC and 900degreesC. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.
会议名称:
Asia-Pacific Optical and Wireless Communications Conference (APOC 2001)
Xu YQ; Li LH; Pan Z; Lin YW; Wang QM .Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing .见：SPIE-INT SOC OPTICAL ENGINEERING .APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2001,159-166
