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题名: Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
作者: Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG
出版日期: 2004
会议日期: DEC 07-12, 2003
摘要: Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.
会议名称: International Conference on Materials for Advanced Technologies
KOS主题词: Metal organic chemical vapor deposition;  Photoluminescence;  Migration, Internal;  interface;  HFETs
会议文集: JOURNAL OF CRYSTAL GROWTH, 268 (3-4)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Chen Z; Chua SJ; Yuan HR; Liu XL; Lu DC; Han PD; Wang ZG .Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 268 (3-4),PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2004,504-508
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