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题名: Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
作者: Ying-Qiang X;  Zhang W;  Niu ZC;  Wu RG;  Wang QM
出版日期: 2004
会议日期: NOV 04-06, 2003
摘要: Effects of SiO2, encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy.
会议名称: Asia-Pacific Optical and Wireless Communications Conference (APOC 2003)
KOS主题词: Rapid thermal processing;  atomic layer deposition;  Optical properties;  Chrysanthemum morifolium
会议文集: APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Ying-Qiang X; Zhang W; Niu ZC; Wu RG; Wang QM .Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well .见:SPIE-INT SOC OPTICAL ENGINEERING .APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2004,594-599
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