| Donor defect in P-diffused bulk ZnO single crystal | |
| Zhao YW (Zhao Youwen); Zhang R (Zhang Rui); Zhang F (Zhang Fan); Dong ZY (Dong Zhiyuan); Yang J (Yang Jun); Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China | |
| 2010-10-11 | |
| Conference Name | 29th International Conference on Physics of Semiconductors |
| Conference Date | 2009 |
| Conference Place | Rio de Janeiro, BRAZIL |
| metadata_24 | 其它 |
| Abstract | A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed. |
| Keyword | Zinc Oxide Doping Defect |
| Subject Area | 半导体材料 |
| Indexed By | CPCI（ISTP） |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/13554 |
| Collection | 半导体材料科学中心 |
| Corresponding Author | Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Zhao YW ,Zhang R ,Zhang F ,et al. Donor defect in P-diffused bulk ZnO single crystal[C],2010. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Donor defect in P-di（321KB） | 限制开放 | License | Application Full Text | |||
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