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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
PHYSICS LETTERS A, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
Authors:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn
Adobe PDF(249Kb)  |  Favorite  |  View/Download:1550/625  |  Submit date:2011/07/05
First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys  
Spontaneous-emission control by local density of states of photonic crystal cavity 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 2, 页码: Article no.24208
Authors:  Jiang B;  Zhang YJ;  Zhou WJ;  Chen W;  Liu AJ;  Zheng WH;  Zheng, WH, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China. whzheng@semi.ac.cn
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Spontaneous Emission  Local Density Of States  Photonic Crystal Cavity  Defect  
The optimization of large gap-midgap ratio photonic crystal with improved Bisection-Particle Swarm Optimization 期刊论文
OPTICS COMMUNICATIONS, 2011, 卷号: 284, 期号: 1, 页码: 226-230
Authors:  Jiang B;  Liu AJ;  Chen W;  Xing MX;  Zhou WJ;  Zheng WH;  Zheng, WH, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. whzheng@semi.ac.cn
Adobe PDF(517Kb)  |  Favorite  |  View/Download:1393/452  |  Submit date:2011/07/06
Particle Swarm Optimization  Bisection-particle Swarm Optimization  Gap-midgap Ratio  Band-gap  Emission  Defect  
Improved fake mode free plane wave expansion method 期刊论文
OPTICS LETTERS, 2011, 卷号: 36, 期号: 15, 页码: 2788-2790
Authors:  Jiang B;  Zhou WJ;  Chen W;  Liu AJ;  Zheng WH;  Zheng, WH (reprint author), Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China. whzheng@semi.ac.cn
Adobe PDF(550Kb)  |  Favorite  |  View/Download:968/67  |  Submit date:2011/09/14
Photonic Band-structure  Gap  Crystals  Defect  
Improved Plane-Wave Expansion Method for Band Structure Calculation of Metal Photonic Crystal 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 3, 页码: Article no.34209
Authors:  Jiang B;  Zhou WJ;  Chen W;  Liu AJ;  Zheng WH;  Jiang, B, Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China. whzheng@semi.ac.cn
Adobe PDF(651Kb)  |  Favorite  |  View/Download:1124/336  |  Submit date:2011/07/06
Gap  Defect  
Donor defect in P-diffused bulk ZnO single crystal 会议论文
, Rio de Janeiro, BRAZIL, 2009
Authors:  Zhao YW (Zhao Youwen);  Zhang R (Zhang Rui);  Zhang F (Zhang Fan);  Dong ZY (Dong Zhiyuan);  Yang J (Yang Jun);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Adobe PDF(321Kb)  |  Favorite  |  View/Download:1898/471  |  Submit date:2010/10/11
Zinc Oxide  Doping  Defect  
The characteristic of the stero-coupling high-Q photonic crystal slab cavity 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8548-8553
Authors:  Jiang B;  Liu AJ;  Chen W;  Xing MX;  Zhou WJ;  Zheng WH;  Zheng, WH, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. whzheng@semi.ac.cn
Adobe PDF(270Kb)  |  Favorite  |  View/Download:1048/368  |  Submit date:2011/07/06
Double Layers Photonic Crystal Slabs Cavity  Dipole Mode  Quality Factor  Pade Approximation  Resonant Frequencies  Pade-approximation  Quality Factors  Wave-guides  Computation  Nanocavity  Emission  Defect  
High Polarization Single Mode Photonic Crystal Microlaser 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 8, 页码: Art. No. 084210
Authors:  Chen W;  Xing MX;  Zhou WJ;  Liu AJ;  Zheng WH;  Chen W Chinese Acad Sci Inst Semicond Nanooptoelect Lab Beijing 100083 Peoples R China. E-mail Address: whzheng@semi.ac.cn
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Defect Laser  Nanocavities  Slab  
Annihilation of deep level defects in InP through high temperature annealing 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 卷号: 69, 期号: 39847, 页码: 551-554
Authors:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(154Kb)  |  Favorite  |  View/Download:951/381  |  Submit date:2010/03/08
Defect  
Influence of different interlayers on growth mode and properties of InN by MOVPE 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 1, 页码: 238-241
Authors:  Zhang, RQ;  Liu, XL;  Kang, TT;  Hu, WG;  Yang, SY;  Jiao, CM;  Zhu, QS;  Zhang, RQ, Chinese Acad Sci, Inst Semicond, Key Lab Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangriq@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(3863Kb)  |  Favorite  |  View/Download:785/167  |  Submit date:2010/03/08
Defect Structure  Epitaxial Gan  Band-gap