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题名: Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells
作者: Xu Y;  Zhu XP;  Song GF;  Cao Q;  Guo L;  Li YZ;  Chen LH
出版日期: 2005
会议日期: NOV 09-11, 2004
摘要: Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. TO get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.
会议名称: Conference on Semiconductor and Organic Optoelectronic Materials and Devices
会议文集: SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Xu, Y; Zhu, XP; Song, GF; Cao, Q; Guo, L; Li, YZ; Chen, LH .Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells .见:SPIE-INT SOC OPTICAL ENGINEERING .SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2005,5624: 91-95
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