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题名: Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces
作者: Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM
出版日期: 2004
会议日期: OCT 18-21, 2004
摘要: Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.
会议名称: 7th International Conference on Solid-State and Integrated Circuits Technology
KOS主题词: accumulation layers
会议文集: 2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM .Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces .见:IEEE .2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,VOLS 1- 3 PROCEEDINGS: 2349-2352
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