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中国科学院半导体研究所机构知识库
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集成光电子学国家重点... [3]
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任光辉 [2]
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SOI亚微米脊型光波导倒锥耦合器免刻蚀氧化制作方法
专利
专利类型: 发明, 专利号: CN200910242349.5, 公开日期: 2011-08-30
Inventors:
陈少武
;
程勇鹏
;
任光辉
;
樊中朝
Adobe PDF(395Kb)
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View/Download：1228/156
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Submit date：2011/08/30
脊型光波导和倒锥耦合器集成的制作方法
专利
专利类型: 发明, 专利号: CN200910093176.5, 公开日期: 2011-08-30
Inventors:
陈少武
;
程勇鹏
;
任光辉
Adobe PDF(312Kb)
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View/Download：907/142
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Submit date：2011/08/30
提高MZI电光调制器速度和效率的电极结构
专利
专利类型: 发明, 专利号: CN200910088462.2, 公开日期: 2011-08-30
Inventors:
程勇鹏
;
陈少武
Adobe PDF(338Kb)
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View/Download：957/152
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Submit date：2011/08/30
